Apparatus for testing reliability of interconnection in integrated circuit

ABSTRACT

In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule. The unit part has vias formed through an interlayer dielectric layer at the both ends of a tooth parallel part, two tooth parallel parts connected with the vias, respectively, and a length parallel part electrically connecting two tooth parallel parts.

RELATED APPLICATION

This application relies for priority upon Korean Patent Application No.2001-44449, filed on Jul. 24, 2001, the contents of which are hereinincorporated by reference in their entirety.

FIELD OF THE INVENTION

The present invention relates to an apparatus of testing an integratedcircuit interconnection. More particularly, the present inventionrelates to a test apparatus which is suitable for testing the leakageprotection reliability of an integrated circuit interconnection having ahigh via density.

BACKGROUND OF THE INVENTION

As semiconductor devices become highly integrated, the sizes ofindividual devices and wires or interconnections become smaller. As onemethod of highly integrating the semiconductor devices, semiconductordevices may be made to have three-dimensional structures. For example,interconnections of connecting semiconductor devices are formed of aplurality of layers to have a three-dimensional structure in thesemiconductor devices.

In a very narrow region of a highly integrated semiconductor device, itis very difficult to connect cells through a contact formed between aninterconnection and an interlayer dielectric layer. For example, in aplurality of interconnection layers, a pattern has a propensity forbeing somewhat larger than a desired size according to aninterconnection layer. A via contact, connecting an upperinterconnection with a lower interconnection for a unified circuit, mayas a result be misaligned. This produces undesirable shorts betweencircuit nodes that should not be connected or opens between circuitnotes that should be connected.

In order to eliminate problems such as shorts or leakage currents, it isrequired to examine a leakage protection reliability between avia/contact and interconnections of various types in designs of asemiconductor device. When a circuit is designed according to a givendesign rule, reliability testing of an interconnection may be performed.That is, in relation to a pattern in a circuit, weak spots where amaximum field would be expected, or where a gap between patterns is at aminimum under the design rule, are artificially formed, and a maximumvoltage is applied thereto. In order to increase the efficiency of sucha test, the weak spots of the designed circuit are formed intoimpressing a plurality of repeated patterns and a known voltagedifferential is applied across opposed pattern pairs. The form of thepattern may not be identical to variable and complex real worldpatterns, but typically are simplified and fixed. For testing leakageprotection reliability, standard comb-comb pattern or comb-serpentinepattern is used.

However, such a method evaluates leakage protection reliability onlybetween interconnections in one layer. This is because, in an initialstep of fabricating an integrated circuit, contacts or vias connectingbetween different layers typically have a lower density than the densityof interconnections formed within a given layer. Additionally, when avia or a contact is required, it is possible to form it at an untroubledpoint in the layout, i.e. a low-density circuit area. Thus, conventionalapparatus for testing an integrated circuit is useful only for detectingproblems between adjacent interconnections in one layer rather thanproblems of via or contact interconnections between layers.

FIG. 1 illustrates conventional apparatus for testing a comb-serpentinepattern within an integrated circuit.

Referring to FIG. 1, each of the comb patterns 10 and 20 has one(vertical) length portion, and a plurality of (horizontal) toothportions protruded from the length portion at the same circuit layerlevel with the length portion. The tooth portions are orthogonal to thelength portion, parallel to one another and repeated, thereby having thesame length. In a test apparatus, a pair of comb patterns 10 and 20 arealigned facing each other, with the tooth portions of one comb patterninterleaved with tooth portions of the other comb pattern. A serpentinepattern 30 is formed between the pair of comb patterns. Through the pairof comb patterns, the serpentine pattern 30 passes parallel to andbetween the tooth portions and turns 180° as illustrated in a regionbetween the length portion of one comb pattern and the end of the toothportion of the other comb pattern. Maximum potential differences areimpressed around the ends of the tooth portion and the neighboring partsof the serpentine pattern. Since a maximum electric field 40 islocalized at every end of the tooth portions, there are plural maximumelectric fields 40. When neither leakage nor shorts are detected at theevery maximum electric field 40, the design of a semiconductor deviceexhibits stability and reliability. A minimum design length (spacing orgap) is labeled “D”.

However, conventional apparatus for testing a leakage or a shortgenerated between interconnection layers may take the alternative formin FIG. 2. In this form, two conductive layers 50 and 60 are formed andone interlayer dielectric layer 70 is interposed therebetween. A biasvoltage is applied between two electrodes 80 formed at the conductivelayers. The form works for testing the reliability of an interlayerdielectric layer, but is too simplistic to detect real world problemsrelated to a via or a contact according to multilayered interconnectionsof a semiconductor device. Thus, in case of a via or a contact open orshort problem in a relatively simple semiconductor device having fewvias or contacts, the problem is diagnosed by an empirical method oftrial and error.

As semiconductor devices become extremely highly integrated, andinterconnections become multilayered, the density of vias or contactsincreases. A short or a leakage current may be generated between a viaand a neighboring interconnection. However, in a highly integratedsemiconductor device, a small difference in process conditions mayproduce a large difference in results or effects. For example, if adifferent method is used to form a via hole and to fill the via holewith a conductive material, or if a different conductive material isused, a formed via may have a different characteristic with respect tothe leakage current or the short.

For more specific examples, in an integrated semiconductor device,copper is used for an interconnection and a via to reduce resistance ofan interconnection or a contact. But, when the copper is processed, theprocessed surface of copper or copper oxide tends to be rough. Thus, theuse of copper may produce a narrow interconnection gap due to roughsurfaces and other surface irregularities. The result is a highprobability of failure, in comparison with other interconnection metalhaving the same interconnection gap.

Additionally, when copper is used, a dual damascene process is generallyemployed because of difficulty in patterning. When the aspect ratio ofthe via hole is increased, a barrier layer is formed at the surface ofthe via hole by employing a sputtering method before filling the viahole with metal. But, the barrier layer is not well stacked at an edgewhere the sidewall and the lower surface of the via hole are connected,so that the copper of high conductivity may make undesirable contactwith a neighboring silicon oxide layer, and a leakage or an insulationbreakdown may occur more frequently near the bottom of the via than inother regions.

The leakage or the short may have various causes. If there are a lot ofproblem spots, it is difficult to locate the failed spots and to correctthem. Thus, without a systematic test, it is difficult to know whether aleakage or a short may occur between a via and a neighboringinterconnection in a semiconductor device. Consequently, a systematicand operational method is needed to detect such via problems in adesigned semiconductor device. In order to realize a solution, a testapparatus having a specific pattern is required, in which a design ruleof a related semiconductor device is reflected and problem areas betweenvias and neighboring interconnections are discovered and avoided.

Despite having different objects and effects, U.S. Pat. No. 6,054,721disclosed that one pattern of an apparatus of testing a leakageprotection reliability between plane patterns may be changed. The ideais to evaluate alignment between patterns of different levels. In thiscase, a via is formed at an end of a tooth portion in a comb pattern, sothat the end of the via is located between lower patterns of a differentlevel. Thus, this case may be used for indicating a problem when anelectric field is concentrated around the via. But, the disclosedapparatus would not indicate when the electric field was concentrated onthe interconnection around the via.

SUMMARY OF THE INVENTION

Thus, it is an object of the present invention to provide a testapparatus of evaluating problem spots in cases where an electric fieldis concentrated on an interconnection around a via in a denselypatterned circuit having multilayered interconnections.

It is another object of the present invention to provide a testapparatus which may easily and effectively detect a problem spot of aleakage or a short between vias and interconnections in multilayeredinterconnections.

It is still another object of the present invention to provide a testapparatus which may systematically and operationally detect problemspots of leakage currents or shorts between vias and interconnections inmultilayered interconnections.

The present invention is directed to a test apparatus. The apparatusincludes a comb-like pattern (hereinafter, simply, comb pattern) and aserpentine-like pattern (hereinafter, simply serpentine pattern) havingvias, and applies a bias voltage to the patterns to form a spot where anelectric field is concentrated, at an interconnection formed aroundvias, i.e., at the end of a tooth portion of the comb pattern.

In a first aspect of the present invention, at least one comb patternhas one straight length portion and a plurality of tooth portionsprotruding from the length portion, parallel with one another and havingthe same length. The serpentine pattern has a plurality of unit partsand connection parts. One unit part corresponds to one tooth portion andsurrounds the one tooth portion. The connection part connects the unitparts. Each of the unit parts has two tooth parallel parts. Each toothparallel part is formed at the same level with the comb pattern,parallel with and spaced apart from the tooth portion by a minimumdesign length according to a design rule.

But in case that the width of the via is wider than that of the toothparallel part, the spaced distance may be wider. Also, the unit part isformed at a level different from that of the comb-like pattern and aninterlayer dielectric layer is interposed between the levels of the unitpart and the comb pattern. The unit part also includes a length parallelpart and two vias. The length parallel part connects the ends of the twotooth parallel part and the vias connect the ends of the tooth parallelparts with the both ends of the length parallel part through theinterlayer dielectric layer. The via is spaced apart from the end of thetooth portion by the minimum design length.

In a plan view of the unit part, the length parallel part and the toothparallel part meet at right angles to each other. The connection partconnects the neighboring two tooth parallel parts to electricallyconnect the two unit parts and to form the serpentine pattern. Theconnection part may be formed at the same level with the length parallelpart and is connected with the tooth parallel part through a via as thetooth parallel part is connected with the length parallel part. Means ofapplying a certain bias voltage is included in the test apparatus,thereby generating a potential difference between the two patterns.

In the first aspect of the present invention, in a top plan view, theend of the tooth portion of the comb-like pattern is overlapped with thelength parallel part connecting the ends of the two tooth parallel partsor located within the minimum design length deviation from the lengthparallel part.

The patterns may be formed of different conductive materials accordingto levels. The conductive material may be of a metal and a metal, ametal silicide and a semiconductor such as a doped polysilicon. The viamay be formed of a material different from a conductive material of theupper level, or of another material of another level.

The tooth parallel part is longer than the length parallel part or theconnection part at least by the minimum design length according to adesign rule. Also, the length portion should be spaced apart from theconnection part more than by the minimum design length.

According to a second aspect of the present invention, two comb-likepatterns are set up together with one serpentine pattern. That is, oneadditional comb pattern is added in the first aspect having one combpattern and one serpentine pattern. Two comb patterns are facing eachother. Tooth portions of the additional comb pattern are runningparallel with and interleaving with those of the original comb pattern.

Length portions and tooth portions of the two comb patterns are formedat the same level. The connection part of the serpentine pattern in thefirst structure has a level different from the tooth parallel part inthe second structure, and is electrically connected with the toothparallel part through a via formed at the end thereof in the firststructure. The end of the tooth portion of the additional comb patternis located at the central position between the ends of the two toothparallel parts under the connection part and laterally spaced apart fromthe ends thereof. But, where the width of the via is wider than that ofthe tooth parallel part, the spaced distance may be wider. Also, the endof the tooth portion in the additional comb pattern is located withinthe minimum design length deviation from the central position betweenthe ends of the neighboring two length parallel parts under theconnection part.

Thus, in the second structure, the length parallel part may be calledthe connection part, since the function and component of the parts areidentical with each other. The tooth parallel part is parallel to thetooth portion of the additional comb pattern. The vias are formed at theturning points where the length parallel parts or the connection partsmeet the tooth parallel parts.

The additional comb pattern may have the same shape as the original combpattern, thus overlapping it. Alternatively, the additional comb patternmay be different in length from the tooth parallel part, width andmaterial thereof. Additionally, the length of the connection part may bedifferent from that of the length parallel part.

The second structure may be defined independently without relation tothe first structure. That is, in the second structure, at least a pairof comb patterns are included. Each of the comb patterns has onestraight length portion, and a plurality of tooth portions protrudingfrom the length portion, the tooth portions being parallel with oneanother and having identical lengths. The two comb patterns face eachother at the same level and the tooth portions of the left comb patternrun parallel with and through those of the right comb pattern. Thesecond structure includes one serpentine pattern comprising toothparallel parts, first length parallel parts, second length parallelparts, and vias.

The tooth parallel parts are formed at the same level with the pair ofcomb patterns, spaced apart from the neighboring tooth portions by agiven distance and parallel therewith. The first length parallel part ispresent at a level spaced from the level of the comb patterns by aninterlayer dielectric layer and connecting the ends of the two toothparallel parts adjacent the comb pattern in the left or right side ofthe serpentine pattern. The second length parallel part is present at alevel spaced from the level of the comb patterns by an interlayerdielectric layer and connects the ends of the two tooth parallel partsadjacent to the comb pattern in the right or left side of the serpentinepattern. The vias connect the ends of the first and second lengthparallel parts with both ends of the tooth parallel part through aninterlayer dielectric layer, respectively, at both ends of the toothparallel part.

Additionally, the second structure has means of applying a certain biasto the comb pattern and the serpentine pattern to generate a potentialdifference therebetween. The second length parallel part corresponds tothe connection part in the first structure but is not present at thesame level.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic plan view showing conventional apparatusof testing a comb-serpentine pattern as a typical example of a testintegrated circuit.

FIG. 2 illustrates a concept diagram showing conventional apparatus oftesting a problem spot of leakage current or short betweeninterconnection layers.

FIG. 3 illustrates a partial top plan view of a part in an embodimentwhere a comb pattern and a serpentine pattern are provided according toa first structure of the present invention.

FIG. 4 illustrates a partial isometric view selectively showing a partwhich will be repeatedly formed, in the same embodiment with that ofFIG. 3.

FIG. 5 illustrates an electric field profile showing a state when a biasvoltage is applied to a terminal of each pattern in the same embodimentwith FIG. 4.

FIGS. 6 and 7 illustrate electric field profiles showing states when abias voltage is applied to a terminal of each pattern in comparativeexamples of the present invention.

FIG. 8 illustrates a partial top plan view of an embodiment where a combpattern and a serpentine pattern are provided according to a secondstructure of the present invention.

FIG. 9 illustrates a partial perspective view selectively showing a partwhich will be repeatedly formed, in the same embodiment with that ofFIG. 8.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In theattached figures, the distance between components and sizes thereof maybe exaggerated for clarity.

Embodiment 1

FIG. 3 illustrates a partial top plan view of a part in an embodimentwhere a comb pattern and a serpentine pattern are provided according toa first structure of the present invention.

FIG. 4 illustrates a partial perspective view of parts which will berepeatedly formed, in an embodiment having the same partial plan viewwith FIG. 3, i.e., a tooth portion 120 and a connected length portion110 of a comb pattern 100, and a neighboring unit part 340 and aconnection part 350 of a serpentine pattern.

Referring to FIGS. 3 and 4, in the present embodiment 1, the toothportion 120 of the comb pattern 100 is located at the central positionbetween vias 330 formed at the ends of tooth parallel parts 310 of theserpentine pattern. The vias 330 extend to an upward direction from theends of the tooth parallel parts 310, respectively, and the toothparallel parts 310 are laterally spaced from the tooth portion 120 by aminimum design length ‘D’ according to a design rule in a semiconductordevice for test. The vias 330 are wider than the tooth parallel part310. Generally, the periphery of a via bottom tends to be weakest, sothat the possibility of leakage is intimately related with the distancebetween the periphery of the via bottom and the neighboringinterconnection pattern. If the width of the via 330 were identical withthat of the tooth parallel part 310, and if the via 330 were exactlyaligned with the tooth portion 310, the tooth parallel part 310 would bespaced laterally from the tooth portion 120 by the minimum design length‘D’.

Additionally, in FIG. 3, the end of the tooth portion 120 seems to beoverlapped with a length parallel part 320 connecting the ends of thetooth parallel parts 310 at which the vias 330 are formed. Those ofskill in the art will appreciate from FIG. 4 that, while overlapped inplain view of FIG. 3, nevertheless the end of the tooth portion 120 islocated with the minimum design length ‘D’ deviation from the lengthparallel part 320. If the end of the tooth portion 120 is spaced toomuch apart from the length parallel part 320 or extends beyond the part320, a maximum field region 600 is not formed around the neighboringinterconnection of the via 330, i.e., around the end of the toothportion 120.

The tooth parallel part 320 is longer than the length parallel part 310or the connection part 350 at least by a minimum design length accordingto a design rule. The length of the tooth parallel part 310 is less thanthat of the tooth portion 120 by the distance ‘S’. The distance ‘S’ ispreferably longer than the minimum design length ‘D’ and conventionallyseveral times thereof, so that a big electric field is not formedbetween the length portion 110 and the connection part 350.

The connection part 350 of the serpentine pattern is present at a lowerinterconnection layer under an interlayer dielectric layer, i.e., at thesame level with the tooth parallel part 310. The both ends of theconnection part 350 are directly connected with the ends of the toothparallel parts at the position of the via 330.

The present embodiment typically would include plural interconnectedinstances of the illustrated parts in FIG. 4. Although not shown in thedrawings, pads are formed at certain ends of the comb pattern and theserpentine pattern for applying a defined bias voltage in a subsequentlyformed test apparatus. When power is supplied to the pads, a potentialdifference develops between the comb pattern and the serpentine pattern.

In a method of forming the first structure like FIG. 4, a lowerconductive layer is stacked using a semiconductor material such as animpurity-doped polysilicon, using a metal such as copper, or using adual layer of a semiconductor and a metal silicide, on a semiconductorsubstrate. This is patterned to form a length portion and a toothportion in the comb pattern and a connection part and a tooth parallelpart in the serpentine pattern. When a lower interconnection ispatterned, an interlayer dielectric layer is formed thereon. Theinterlayer dielectric layer may be formed of a CVD (chemical vapordeposition) silicon oxide layer which is generally used in asemiconductor device. A planarization process is preferably performed. Apatterning process is performed to form a groove for a length parallelpart composing an upper interconnection pattern, to a certain depth,through the interlayer dielectric layer. A via hole is formed through apart of the groove to expose the ends of the tooth portion at the lowerinterconnection pattern.

A conductive barrier layer is thinly formed at the substrate where thevia hole is formed. The barrier layer is formed of a titanium/titaniumnitride by employing a sputtering method. Then, a copper seed layer isstacked by a CVD method, and a bulk copper layer fills the groove andthe via hole by employing an electroplate method. The copper layer andthe barrier layer, which are formed on the interlayer dielectric layer,are eliminated by a CMP (chemical mechanical polishing) process. Thus,the via and the upper interconnection are formed of the same materiallayer. Alternative to the above dual damascene process, other processesmay be employed. That is, a via hole is only formed through aninterlayer dielectric layer and a via plug fills the via hole. Adistinct conductive layer is stacked and patterned to form an upperinterconnection pattern.

FIG. 5 illustrates a plan view showing a field profile or a maximumfield part by simulation of the same parts of FIG. 4, when a definedvoltage differential is applied between a serpentine pattern and a combpattern. The ends of the tooth parallel parts 310 are connected with thelength parallel part 320 through the vias 330. The end of the toothportion 120 is present between the ends of the tooth parallel parts 310under the length parallel part 320. Maximum field region 341corresponding to a relative electric field strength of approximately18˜21 appears around tip parts of the end of the tooth portion 120.Other electric field regions 343, 345, 347, and 349 corresponding to therelative electric field strengths sequentially appear to surround higherfield regions. Through the analysis with respect to the figures, it ispossible to know whether a failed problem spot is generated at theregions having a plurality of vias spaced by a design length in asemiconductor device. Also, it is possible to increase a reliability ofa semiconductor device by testing a design thereof.

Comparative Example 1

FIG. 6 illustrates a plan view showing an electric field profile or amaximum field part by simulation when a certain bias is applied betweena serpentine pattern and a comb pattern, in a comparative example forbeing compared with the example 1. In FIG. 6, the end of the toothportion 120 is spaced apart from the length parallel part 320 more thanby the minimum design length ‘D’. The maximum field strength in thefirst embodiment is approximately 18˜21 at the maximum field region 341like FIG. 5, but the present comparative example has the maximum fieldstrength of only approximately 14˜16 at the maximum field region 351.

Comparative Example 2

FIG. 7 illustrates a plan view showing an electric field profile bysimulation when a certain voltage is applied between a serpentinepattern and a comb pattern. In FIG. 7, the end of the tooth portion 120exceeds the position of the length parallel part 320 more than by theminimum design length ‘D’. The present comparative example has themaximum electric field strength of only approximately 10˜12 at themaximum field region 361 in comparison with the value of approximately18˜21 in the first embodiment.

Embodiment 2

FIG. 8 illustrates a partial top plan view showing a part in a secondembodiment, in which two comb patterns 200 and 400 and one serpentinepattern 300 are provided according to a second structure. In the presentembodiment, one comb pattern 400 is further placed laterally from theserpentine pattern at the opposite position of the original comb pattern200. The serpentine pattern 300 also acts as forming an electric fieldwith respect to the additional comb pattern 400.

FIG. 9 illustrates a partial isometric view showing parts which will berepeatedly formed, in an embodiment having the same partial plan of FIG.8.

Referring to FIGS. 8 and 9, the length portions 210 and 410, and thetooth portions 220 and 420 of the two comb patterns 200 and 400, and thetooth parallel part 310 of the serpentine pattern 300 are formed at alower interconnection layer under an interlayer dielectric layer. Theconnection part 350 and the length parallel part 320 of the serpentinepattern 300 are formed at an upper interconnection layer over theinterlayer dielectric layer. The parts illustrated in FIG. 9 arerepeatedly connected with one another to form a core part of a testapparatus.

In the embodiment 2, the tooth portions 220 and 420 are located at thecentral positions between the tooth parallel parts 310 under theconnection parts 250 and the length parallel parts 320, respectively,and the ends of the tooth portions 220 and 420 are laterally spacedapart from the neighboring vias 330 by the minimum design lengths. InFIG. 8, the end of the tooth portion 220 overlaps the length parallelpart 320, and the end of the tooth portion 420 overlaps the connectionpart 350. The tooth parallel parts 310 should be longer than the lengthparallel parts 320 and the connection parts 350 at least by the minimumdesign length according to a design rule. When the length of the toothparallel part 310 is subtracted from that of the tooth portion 420 inthe additional comb-like pattern 400, the remnant length should belonger than the minimum design length according to the design rule andpreferably several times thereof, so that an excessive electric field isnot formed between the length portion 410 and the connection part 350.

Although the illustrated parts in FIG. 9 are rotated 180° on a verticalaxis ‘K’, the rotated patterns have the same shape with the originalpatterns, i.e. the patterns are symmetric. Thus, in the presentembodiment, the length parallel part 320 is connected with a toothparallel part 310 through an additional via 360 and acts as a kind ofthe connection part 350. The connection part 350 and the length parallelpart 320 are formed at the same upper interconnection layer over theinterlayer dielectric layer. Also, one serpentine pattern 300 is usedfor forming an electric field between two comb patterns.

Except for these differences in the level of the length parallel part320 and the shape of the entire structure, the present embodiment hassimilarities with the embodiment 1, since parts are repeatedly connectedand the electric field may be localized around the end of the toothportion 220 or 420 present between two neighboring vias 330 or 360 underthe length parallel part 320 or the connection part 350. An apparatusfor applying a bias voltage should be able to apply a certain bias tothe additional comb pattern 400. Thus, all details, related to the combpattern 200 or 400 and the serpentine pattern 300, may be identical withthe embodiment 1. The tooth parallel part 310 is required to be muchlonger than the connection part 350, so that two collective vias 330don't affect the two opposite collective vias 360. The second structureof the present embodiment 2 has an advantage in that a structure offorming two neighboring vias 330 or 360 may be more highly integrated.

However, differently from the present embodiment, tooth portions 220 and420 in the two comb patterns 200 and 400, composing the second structureof the present invention, may have different lengths or different widthsfrom each other to the exclusion that tooth portions 220 and 420 aresufficiently longer than the tooth parallel part 310. And the lengths ofthe tooth parallel part 310 and the connection part 350 may bedifferent. In this case, when the patterns are rotated 180° on thevertical axis ‘K’, the rotated patterns are not identical with theoriginal patterns.

According to the present invention, out of problems induced around a viaand a neighboring interconnection according to multilayeredinterconnections and a narrow gap between patterns in a semiconductordevice, with respect to the case in which an electric field is localizedaround an interconnection adjacent to a via, it is possible to find outa failed or problem spot such as a leakage current or a short easily andeffectively by using a systematic and operational test apparatus.

While the invention has been shown and described with reference to acertain preferred embodiment thereof, it will be understood by thoseskilled in the art that various changes in form and details may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims.

What is claimed is:
 1. Apparatus for testing a leakage protectionreliability of an integrated circuit interconnection, comprising: atleast one comb-like pattern comprising one straight length portion, anda plurality of tooth portions; one serpentine-like pattern comprising aplurality of unit parts and at least one connection part; and means ofapplying a defined bias voltage between the comb-like pattern and theserpentine-like pattern to generate a potential difference between thetwo patterns, wherein the plurality of tooth portions protrude from thelength portion, substantially parallel with one another and havingsubstantially the same lengths, wherein each of the unit partscomprises: two tooth parallel parts laterally spaced apart from theneighboring tooth portions by a certain distance, and extendingsubstantially parallel therewith; a length parallel part formed at alevel different from the level of the comb-like pattern and connectingthe ends of the two tooth parallel parts and forming turning points withthe tooth parallel parts; and two vias connecting the ends of the twotooth parallel parts with the both ends of the length parallel partthrough an interlayer dielectric layer and spaced apart from the end ofthe neighboring tooth portion by a minimum design length according to adesign rule, and wherein the connection part connects the ends of theneighboring two tooth parallel parts for connecting the two unit parts.2. The apparatus as claimed in claim 1, wherein: the end of the toothportion is located within the minimum design length deviation from thelength parallel part connecting the two vias in a top plan view; and theconnection part is spaced apart from the length portion at least by theminimum design length.
 3. The apparatus as claimed in claim 1, whereinthe connection part is formed of the same material with the toothparallel part at the same level.
 4. The apparatus as claimed in claim 1,wherein the length portion, the tooth portion and the tooth parallelpart formed at the same level, and wherein the length parallel partformed at a different level, are composed of different materials.
 5. Theapparatus as claimed in claim 1, wherein the tooth parallel part islonger than the length parallel part or the connection part at least bythe minimum design length.
 6. The apparatus as claimed in claim 1,wherein the connection part is formed at a different level spaced fromthe two tooth parallel parts by the interlayer dielectric layer, andboth ends of the connection part are connected with the ends of the twotooth parallel parts by vias through the interlayer dielectric layer.